Abstract
The electron and hole transport in bandgap-engineered amorphous silicon/germanium alloys (a-Si,Ge:H,F) is studied using steady-state conductivity, time-of-flight and the voltage-bias dependence of the photocurrent. We investigate graded-bandgap structures and sawtooth multilayers. We find that in graded-bandgap structures the mobility-lifetime (μτ) products for both electron and holes show strong asymmetry in the direction of the compositional grading. We report for the first time on the optoelectronic properties of a-Si:H,F/a-Si,Ge:H,F sawtooth superlattices.
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