Abstract
Electric field distribution around the circular corners of a rectangular planar diffused junction has been analyzed with the help of three-dimensional symmetry considerations. Analytical results derived in this paper have been used in calculating the breakdown voltages of one-sided abrupt types of such planar junctions with different parameters like background doping, junction depth, and radius of curvature of the rounded corners. These results are useful in the design of planar junctions with better breakdown characteristics and optimal utilization of the semiconductor area on a wafer.
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