Abstract
A CMOS compatible high-voltage shallow trench isolation (STI) drain extended MOS (DEMOS) transistor is fabricated and its electrical characteristics are studied. A local p-well (PW) plate served as a reduced surface field is adopted to enhance the breakdown voltage (BV) by reducing the effective doping concentration of the accumulation region. The conformal-mapping method is used to evaluate the BV of this 2-D STI DEMOS structure theoretically. A BV model, which relates the BV to the width of the accumulation region $x_{a}$ and the overlap/underlap $O_{\!p}$ between the local PW plate and the STI, is derived. The predictions of this model agree very well with both the experimental data and the technology computer-aided-design simulations.
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