Abstract
In this paper, electrical and microwave characteristics of Al0.1Ga0.9 N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO2) passivation. The recessed floating field plate HEMT with gate length LG = 0.8 μm, gate to drain distance LGD = 1 μm, and HfO2 (SiN) passivation HEMT reports peak drain current density (IDS) of 0.282(0.288) A/mm at VGS = 0 V, three terminal off-state breakdown voltage (VBR) of 677 (617) V, 6.38 Ω.mm of ON-resistance (RON), transconductance (gm,max) of 93(95) mS/mm, and FT/FMAX of 11.4/49 (12/22) GHz. The HfO2 (SiN) passivation device demonstrated the Johnson figure of merit (JFoM)) of 7.71 (7.404) THz.V and FMAX x VBR product of 33.173 (13.574) THz.V. The high JFoM along with high FMAX x VBR indicates the potential of the ultrawide bandgap AlGaN HEMTs for future power switching and high-power microwave applications. The breakdown voltage (VBR) of the floating field plate HEMT is improved 54 % from conventional HEMT and 31 % improvement from gate field plate HEMT.
Highlights
Group III-nitride based wide-bandgap semiconductors are used in high power microwave and switching applications
We proposed the recessed floating field plate, Al0.1Ga0.9N channel HEMT for improve the VBR of the device with satisfactory RF performance
The transfer and output characteristics of simulation result of conventional Al0.1Ga0.9N channel HEMT is validated with experiment result of [24] and it is shown in Fig. 5 and Fig. 6 respectively
Summary
Group III-nitride based wide-bandgap semiconductors are used in high power microwave and switching applications. Since the low Al composition AlxGa1-xN channel saturation velocity is on par with GaN channel, along with enhanced critical field improves the JFOM of AlGaN channel HEMTs than GaN-based HEMTs. The high VBR is achieved for long channel LG, long LGD HEMTs, along with Al-rich AlGaN channel [6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26]. The DC and microwave characteristic of proposed HEMT with experimental validation is discussed in section 4 with concluding remarks
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