Abstract
Studies of high-voltage lateral device structures on a thin silicon layer over silicon dioxide have been carried out. It was found both theoretically and experimentally that over 600-V devices can be realized using a structure consisting of an n diffusion layer over a 15- mu m-thick high-resistivity n/sup -/ silicon layer over 3- mu m silicon dioxide (SOI). A method is presented to enhance breakdown voltage by applying a large share of the voltage to the bottom oxide. >
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