Abstract

The NAND flash memory has been attracting attention as anext-generation storage devicesuitable for a ubiquitous mobile environment due to its characteristics of having low power and fast access speed as compared to the other types of flash memory. In particular, flash memory is being used in many fields, such as memory for a small mobile device and a large-capacity memory like SSD (solid state disk), and many researches are being actively done for the effective utilization. However, the NAND flash memory-based storage device has unique hardware features, such erasing before writing based on the B-tree index structure, which causes degradation when writing requests are made repetitively.In order to address such problem, this paper proposes an improved technique for the NAND flash memory-based failure recovery by using the LA tree. The performance of the proposed technique has been evaluatedin comparison to the existing technique and it was found that the proposed technique resulted in 50% improved performance as compared to the existing technique.

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