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Abstract
Impact ionization of electron localized states on the insulating side of a strain-induced metal-insulator transition in Si:P and Ge:Sb crystals was investigated for donor concentrations appreciably exceeding the critical concentration for a transition caused by variations in the impurity concentration. Dependences of the activation energy and impact-ionization field on uniaxial stress were derived. Transitions from metallic-type conductivity to ɛ2-conductivity in the region of high uniaxial pressures are analyzed on the basis of the transformation of the conduction band energy spectrum along a certain direction of the deformation axis in silicon and germanium crystals.
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