Abstract
The electrical breakdown of the grain-boundary barrier of Nb-doped SrTiO{sub 3} grain-boundary barrier layer capacitors has been investigated using conductance and capacitance measurements under dc bias. The properties of the individual barriers are related to the stoichiometric ratio, R = (Ti + Nb)/Sr, and to the amount of dopant, N = Nb/(Ti + Nb). The value R acts principally on the interface charge, i.e., the low level resistance of the grain boundary, whereas N acts principally on the position of the Fermi level in the grain. A strong band bending and a deep Fermi level favor the formation of an inversion layer on the reverse-sided junction, which are responsible for the increasing C (V) curves observed at low frequencies.
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