Abstract
Thin oxides grown on silicon substrate in which Cu+ ions had been implanted before oxidation were studied by transmission electron microscope (TEM) and scanning TEM imaging methods. Cu precipitates, stacking faults, and dislocations appeared at the SiO2/Si interface on the degraded specimens. The Cu precipitates reduce the breakdown strength by local thinning of the oxide thickness. Stacking faults and dislocations, however, do not reduce the breakdown strength.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.