Abstract
The demand for high power density and well working in harsh environment is fulfilled with wide bandgap devices. Industrial sector depends on the development and production high-frequency and high-voltage devices. In this work, the breakdown voltage of SiC-based Schottky diode increases by using trench egde termination method and the trench is filled with dielectric material SiO 2 . Owing to good thermal and electrical properties, SiC is considered as the best semiconductor for the devices which demand for high power, high temperature and high frequency. SiC has a low resistance for the drift area even when it is designed to handle high voltage, which is its key benefit for power device applications. Simulation of the device can be done by the Silvaco TCAD software to observe the electrical and physical behaviour of unterminated as well as terminated device. Estimated breakdown voltage of the device when it is unterminated is 140 V. By using trench termination, electric field at the edge spreads away and the observed breakdown voltage was increased to 800 V. With the potential to decrease device size and raise blocking voltage to an optimal level, trench termination technology has proven appealing for high-voltage power device design.
Published Version
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