Abstract
This work evaluates the time dependent dielectric breakdown (TDDB) characteristics of TiN/ HfxZr1-xO2/Al2O3/Ge gate stacks by changing the Zr content and with slot-plane antenna plasma oxidation (SPAO), performed immediately after the ALD deposition of the high-k layers. It was observed that the equivalent oxide thickness (EOT) decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. With 100% Zr incorporation EOT increased significantly. This is possibly due to the formation of low-k interfacial GeO2 at the interface for 100% Zr whereas for other samples have comparatively thinner GeOx interfacial layers. Weibull plots shows that charge to breakdown (Q BD) increased with increase the Zr percentage. However, the breakdown acceleration factor decreased with Zr percentage up to 75% and increased rapidly for 100% Zr content. It is, therefore, believed that GeO2 leads the TDDB degradation.
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