Abstract
Photon-induced property changes of sputter-deposited GeO(2)-SiO(2) thin glass films were investigated. Irradiation with ArF laser pulses induced the changes in refractive index of -10% and volume of +30% in the film without ablation. A Bragg grating with a positive sinusoid wave pattern was printed upon the film by irradiation with ArF excimer laser pulses through a phase mask. The irradiated area could be quickly etched by a HF solution. The ratio of etching rate of irradiated area to unirradiated area was higher than 30. A Bragg grating with a surface relief pattern was successfully formed on the film by irradiation with excimer laser pulses followed by chemical etching. Diffraction efficiency of the gratings increased by 25 times with the etching.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
