Abstract
In this paper we derive and discuss the boundary conditions for the electron wavefunction in generalGa1−xInxNyAs1−y-based heterostructures described by the band anticrossing model. The use of these boundaryconditions greatly simplifies the calculation of, for example, transition energies in quantumwells. We then apply the derived equations to model the temperature-dependent bandgap ofGa1−xInxNyAs1−y/GaAs quantum well structures with high indium concentrations. From a fit to ourexperimental photoreflectance data we find evidence that the effective nitrogen levelEN in the band anticrossing Hamiltonian, measured with respect to the valence bandedge, shifts to higher energies with decreasing temperature. This supports andextends similar results reported in the literature for low indium content epilayers.
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