Bound polaron in a wurtzite GaN/Al xGa 1 − xN ellipsoidal finite-potential quantum dot

Abstract

A variational method is used to study the ground state of a bound polaron in a weakly oblate wurtzite GaN/Al x Ga 1 − x N ellipsoidal quantum dot. The binding energy of the bound polaron is calculated by taking the electron couples with both branches of LO-like and TO-like phonons due to the anisotropic effect into account. The interaction between impurity and phonons has also been considered to obtain the binding energy of a bound polaron. The results show that the binding energy of bound polaron reaches a peak value as the quantum dot radius increases and then diminishes for the finite potential well. We found that the binding energy of bound polaron is reduced by the phonons effect on the impurity states, the contribution of LO-like phonon to the binding energy is dominant, the anisotropic angle and ellipticity influence on the binding energy are small.