Abstract
The bound multiexciton luminescence of lithium-doped silicon has been investigated to test the model for the formation and decay processes of bound multiexciton complexes which we propsed previously for analysis of the bound multiexciton luminescence in boron-doped silicon. The results show that the excitation-level dependence of the bound multiexciton luminescence lines is also well explained by rate equations based upon the model. From the analysis we have obtained the exciton capture and Auger recombination rates for bound multiexciton complexes in lithium-doped silicon. The decay curves of the bound multiexciton luminescence lines have been also calculated, the results indicating some characteristic features seen in the previously reported data.
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