Abstract

The bottom electrode crystallization (BEC) method was applied to the crystallization of lead zirconate titanate (PZT) thin films deposited by laser ablation over Si/SiO2/Ti/Pt structures, with the platinum films being deposited at two different temperatures. The results were compared with those obtained by rapid annealing with halogen lamps and furnace annealing. PZT films crystallized over platinum deposited at lower temperature have larger grains and tend to have a (111) preferential orientation, while those crystallized on platinum deposited at higher temperature have smaller grain sizes and tend to have a (101) preferred orientation. The results are consistent with the increase of titanium diffusion as the temperature for platinum deposition increases, having as a consequence a greater number of nucleation centers on the platinum surface. The ferroelectric properties of the films crystallized with the BEC method are good, being similar to those obtained with the other crystallization methods using the same parameters.

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