Abstract
We develop plasma-deposited boron-doped silicon oxide layers with multifunctional capabilities: Firstly, they are used as local diffusion sources for attaining low saturation current densities of J0 = 84 fA/cm at sheet resistances as low as 67 /□ and surface boron concentrations in the range of 4–710 cm3, suitable for efficient metallization. Secondly, they act as diffusion barriers against other dopants. Therefore a co-diffusion process consisting of a boron drive-in and a phosphorus diffusion in a POCl3 furnace in only one high temperature step potentially allows to simplify the fabrication of high-efficiency n-type PERT cells. Process and device simulations indicate that a co-diffusion temperature near 900C and a co-diffusion time of about 20 minutes are optimum for reaching cell efficiencies near 21%.
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