Abstract
Boron vapour-phase doping (VPD) has been investigated as a possible processing tool for defect-free applications in shallow, vertical and deep junctions in devices. From literature and experiments it has become clear that silicon boride (SiB3) layers can form during VPD. Thermodynamical calculations and analytical techniques were used to establish boride-free doping conditions. SiB3 formation and decomposition have been investigated as a function of temperature, time and the presence of O-containing compounds in the gas system. The hydrogen anneal after boron VPD not only decomposes boride layers on the Si surface, but it is also a means to control dose and depth of a boron junction. Boride-enhanced boron diffusion with buried SiB3 layers has been demonstrated. Effects of patterned Si windows in masking layers and polycrystalline Si layers on the VPD process are described. Application of the boron VPD technique to make a p-type base in bipolar npn transistors shows excellent device and high-frequency characteristics.
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