Abstract
An attempt has been made on the device fabrication with boron ion implanted C 60 thin films. The C 60 thin films evaporated on n-type Si (1 0 0) have been implanted with mass analyzed positive boron ions at a fixed energy of 80 keV to different doses in the range 1×10 12−1×10 15 ions/cm 2. Raman scattering and FTIR studies of the high-dose implanted films reveal the formation of amorphous carbon layer. Hall effect measurements indicate the formation of p-type conductivity in C 60 thin films with boron ion implantation. In order to realize uniform boron distribution in the C 60 films, multiple boron implantation with energies in the range of 50–80 keV has been examined and p-type C 60/n-type Si heterojunction solar cells with an efficiency as high as 0.023% have been fabricated. The photovoltaic properties of the solar cell structure are discussed along with the dark and illuminated I— V characteristics.
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