Abstract
AbstractWe review recent second harmonic generation (SHG) measurements for highly boron‐doped Si/SiO2 systems. Using electric field sensitive time‐dependent SHG (TD‐SHG), we determined that the direction of the initial DC electric field at the interface induced by boron induced charge traps is from oxide to silicon thus demonstrating that the boron induced charge traps in the oxide are positively charged. For a thin oxide (∼2 nm) both boron traps and O2 surface oxide traps contribute. However, for a highly boron‐doped Si/SiO2 sample with a thick thermally grown oxide (thickness: 12 nm), the TD‐SHG signal exhibits a monotonic decrease arising from filling only the boron charge traps. By fitting our data, we show that the interface effective susceptibility |χ(2)| is heavily dependent on doping concentration.
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