Abstract
Boron doping with a high carrier concentration has been realized in Si molecular beam epitaxy (MBE) using a HBO2 source with the usual Knudsen cell. Maximum carrier concentration has reached 6×1020 cm−3 at crucible temperatures of 900 °C. From a comparison between activation energy for vapor pressure and carrier concentration dependence on crucible temperature, it was concluded that boron evaporated in the form of HBO2 (g) from the HBO2 source. The boron profile achieved by Knudsen cell shutter opening and closing was sufficiently steep. The oxygen concentration in the epitaxial film depended on the growth temperature. Above 750 °C, the oxygen concentration decreased to under the detection limit of secondary ion mass spectroscopy, 1018 cm−3. These results make it possible to use boron as the p-type dopant in silicon MBE without using ion imbedding or a very high temperature crucible.
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