Abstract

ABSTRACTProximity rapid thermal diffusion (RTD) has been investigated as a doping technique for p-type boron doped junctions. The efficiency of RTD has been studied as a function of process variables (temperature, time, and ambient) and evaluated based on sheet resistance measurements, secondary ion mass spectroscopy (SIMS), spreading resistance (SR), and Fourier transmission infrared absorption (FTIR) in a spin-on-dopant source (SOD). The doping efficiency in source wafers is controlled by different mechanism than in processed wafers. Strong influence of dopant incorporation in the processed wafers on oxygen content in the diffusion ambient is observed especially at low diffusion temperatures.

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