Boron doping effects on graphene susceptibility

Abstract

Within the tight-binding Hamiltonian model and coherent potential approximation, the effects of doped boron concentration on the density of states and the temperature dependence of orbital magnetic susceptibility of graphene are studied. An expression of susceptibility based on the linear response theory and Green's function technique is used. It is found that when dopants are introduced, van-Hove singularities in the density of states are broadened. It is also shown that the susceptibility crossover of the doped system is appeared in the lower value of temperature in comparison with pure graphene.