Boron doped diamond electrodes based on porous Ti substrates

Abstract

The boron doped diamond (BDD) electrodes were fabricated as a novel type of porous conductive diamond by hot filament chemical vapor deposition (HFCVD) technique. The challenge for the composite material is the stability, and diamond growth parameters should be optimized in order to cover entirely the substrate surface. The high-quality porous BDD electrodes were prepared by added high concentration of boron in the reaction compartment at the initial stage to inhibit the formation of TiC interlayer. With the characterization of SEM and XRD, it can be found that the substrate surface including the bottom, surface and wall in the pores was entirely covered by boron doped diamond film, and the crystalline type of diamond almost was crystal plane (111). The electrochemical characteristics of the BDD electrodes were investigated by the CV and large potential windows could be observed. Boron element influences the interlayer formation, the high concentration of doped boron can inhibit the formation of TiC, and addition of boron is favored for adhesion enhancement.