Abstract
AbstractHighly boron doped epitaxial silicon, with boron concentrations well above 1x1020 cm‐3, is of great interest for applications in large variety of electronic and photonic devices where it is used as a low resistivity contact. The Bragg peak position of a homogeneous solid solution epitaxial film is directly related to the solid solution concentration, film strain and, consequently residual stress. The peak shape contains information about defects present in an epilayer.Here we report structural experiments performed at room temperature and atmospheric pressure on a set of boron doped Si thin epilayers grown on a Si(001) substrate. We analyzed the BSi epilayers using high resolution X‐ray rocking curve, reflectivity measurements and high resolution reciprocal space mapping (HR‐RSM). The measurements were carried out by Rigaku SmartLab diffractometer. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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