Abstract
ABSTRACT Boron (B)-doped p+ polycrystalline-silicongermanium (poly-Si0.73Ge0.27) gate/AlNx/ Al2O3/AlNx/n-Si metal-oxide-semiconductor (MOS) capacitors were fabricated in order to improve the blocking properties of B diffusion into the surface of an Al2O3 film and the Si substrate by using in-situ atomic-layer-deposited (ALD) AlNx. The AlNx/Al2O3/AlNx stack film exhibited slightly better B diffusion-blocking properties as a result of the AlNx layers in the top and bottom interface layers of the Al2O3 film. The B-doped poly-Si0.73Ge0.27 gate/AlNx/Al2O3/AlNx/n-Si MOS capacitors had a lower current density of 3.8 × 10−7A/cm2 at 1 V and a better reliability with an equivalent oxide thickness (Eot) of 2.45 nm due to the lower level of B penetration as a result of the AlNx and nitrogen incorporated interfacial silicon oxide (SiOxNy) layers and the enhanced thermal stability.
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