Boron Determination in Silicon by the Nuclear Track Technique

Abstract

The nuclear track technique was used for the determination of the boron dopant density in silicon. It was found that boron in the range of 1015–1020atoms/cm3 could be detected. The resistivity of the silicon specimens as a function of the boron density determined by the nuclear track technique compares well with the work of Wagner relating resistivity to boron density. The results obtained by the nuclear track technique show some scatter, but in general agree with those determined by the junction capacitance‐voltage method.