Abstract
Recent investigations of ohmic contacts to silicon indicate that for many metallization candidates, contacts made to p+Si are of considerably higher resistance than similar contacts to n+Si. Recent studies have also shown that active boron acceptors in silicon may be deactivated by hydrogen. We discuss the effect that this hydrogen deactivation may have on the specific contact resistance, in view of the results of recent studies that involved several different metallizations. We propose means to deal with the problem in order to secure good ohmic contact characteristics to both polarities of active regions in silicon.
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