Boron Damage Profiles in Crystalline and Fluorine Preamorphized Silicon Layers

Abstract

Damage accumulation profiles induced by ion implantation into single-crystalline silicon layers and preamorphized silicon layers were investigated by the photoacoustic displacement (PAD) method. Boron ions were implanted at with and into single-crystalline silicon and preamorphized silicon. Preamorphization was achieved by fluorine ion implantation prior to boron ion implantation. These implanted layers were annealed at for by rapid thermal annealing. Damage profiles measured by PAD were compared to measured and calculated dopant and damage profiles. Effects of ion dose, annealing temperature, and combination of fluorine and boron implants were studied. Analysis of secondary ion mass spectroscopy profiles of fluorine combined with boron yielded values of for F-B binding energy in a segregated region.