Abstract
Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions.
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