Abstract
Boron carbonitride (BCN) thin films were deposited on Si (100) substrates at room temperature by sequential pulsed laser ablation (PLA) of graphite and hexagonal boron nitride (h-BN) targets in vacuum and in nitrogen atmosphere in the pressure range 1–100 Pa. Different analysis techniques as transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) pointed out the synthesis of h-BCN and c-BCN. The grain size of the crystalline c-BCN phase was estimated to be in the range 30–80 nm. The size of the crystallites in h-BCN phase was 4.6 μm, with a transversal dimension of about 30 nm. Complementary microhardness measurements evidenced the high microhardness (values up to 2.9 GPa) of the deposited films.
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