Abstract
A metal-insulator-metal (MIM) structure using boron carbon nitride (BCN) was tested for its UV detection capability. Since BCN is one of the hardest and chemically robust materials, it is expected to be a potential choice for a UV detector in extreme and harsh conditions. The BCN thin films were deposited using a dual target RF magnetron sputtering process. The optoelectronic performance of the BCN MIM devices were examined through UV photocurrent measurements. A UV photocurrent of two orders of magnitude higher with respect to dark current was achieved in the range of -3 to 3V.
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