Abstract
Narrow band semiconductors, in which the transport occurs by small polaron hopping, appear to be of promise for very high temperature thermoelectric energy conversion. Boron carbide is an example of this class of materials and its parameters relevant to this application will be discussed. The figure of merit was found to be a strongly increasing function of temperature with a value of ∼0.5×10−3 K−1 at 1300 K. The prospects of further improvement in performance will be discussed.
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