Boron and indium substitution in GaAs(0 0 1) surfaces: Density-functional supercell calculations of the surface stability

Abstract

Using the density-functional method and surface supercells the surface formation energies are calculated for the most stable GaAs(0 0 1) surface reconstructions without and with up to four indium or/and boron substitutions. Optimal conditions for the growth of the alloys are derived from calculated surface stability diagrams. The incorporation of indium into GaAs without phase separation is possible under strong As-rich conditions and medium to In-rich conditions. Less As-rich conditions can lead to the formation of an InAs phase. Ga-rich conditions give an InGa phase. Isovalent boron incorporation into GaAs without phase separation is possible under strong arsenic and reduced boron exposure. A BAs phase can be formed under more B-rich conditions. More Ga-rich conditions lead to the boron substitution in arsenic positions. The formed boron dimers can be a starting point for the formation of a boron phase. A true antisite boron substitution is less probable. Using the suitable growth conditions obtained for the ternary alloys it is energetically more favourable to incorporate both indium and boron (formation of BInGaAs) than to incorporate only one of the two elements (In or B). The antisite boron incorporation is not favoured in combination with isovalent boron or indium.