Abstract
Boron δ-doping was carried out by atmospheric chemical vapor deposition. The process consists of removal of native oxide, boron adsorption at 500°C, cap-layer deposition, and solid phase epitaxy at 600°C. From SIMS results with various primary ion energies, it was found that the boron profile has a peak at the interface between the substrate and the epitaxial layer and its full width at half maximum was a few nanometer. By evaluating the crystalline quality of the cap layer, it was found that the amount of adsorbed boron atoms has to be less than a few monolayer to obtain a solid phase epitaxial layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
