Abstract
AbstractIn the present work, Zn2SnO4 nanoparticles were doped with silicon to improve their electrical and optical properties by the conventional solid‐state reaction method. The results showed that the minimum electrical resistivity of about 0.09 Ωcm was obtained for Zn2SnO4 nanoparticles with 3% Si doping. The decrease in the electrical resistivity can be attributed to the insertion of Si+4 atoms into the Zn+2 and/or Sn+4 sites and also the formation of more oxygen vacancies in the Zn2SnO4 lattice. The formation of the more oxygen vacancy defect states in Si‐doped Zn2SnO4 nanoparticles was verified by photoluminescence spectroscopy. The efficiency of a dye‐sensitized solar cell based on 3% Si‐doped Zn2SnO4 was significantly better, by about 81%, compared to that of a cell based on the undoped Zn2SnO4. The enhancement in the efficiency can be ascribed to the facilitation of electron transport throughout a photoelectrode due to increase in the charge carrier concentration which was caused by Si doping.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
