Abstract
This manuscript introduces and experimentally investigates, for the first time, the Planar Power MOSFETs implemented with Diamond (hexagonal gate geometry) Metal-Oxide-Semiconductor Field Effect Transistor with different a angles, as a basic cell, in comparison to the homologous Multifinger PPM, regarding the same gate die area and bias conditions. Using the DPPM as output current driver (switch) in digital integrated circuits applications, we can remarkably boost the PPM electrical performance in relation to the MPPM, considering the same gate area (A G ) and bias conditions (BC).
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