Abstract
This paper focuses on the role of the longitudinal spacing between the auxiliary gate and control gate in boosting the performance of an ultrascaled junctionless carbon nanotube tunnel field-effect transistor (JL CNT-TFET). The investigation is based on self-consistent quantum simulations in the nonequilibrium Green’s function formalism in the ballistic limit. It is found that dilation of the ungated longitudinal space between the gates causes a significant improvement in the leakage current, ambipolar behavior, subthreshold swing, on/off-current ratio, power–delay product, and intrinsic delay. In addition, a substantial enhancement in the swing factor and current ratio is also recorded for the JL CNT-TFET with coaxial control gate length below 10 nm. The results indicate that adjusting the spacing between the auxiliary gate and control gate is a simple, efficient, and promising approach to achieve ultrascaled JL CNT-TFETs with very high performance.
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