Abstract
In this paper, the open-circuit voltages (V OC) of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells were improved by soaking the CZTSSe films in Cd/NH3 solutions before the deposition of buffer layers. The effects of Cd/NH3 soaking on the properties of CZTSSe films and solar cells were investigated in depth. We found Cd/NH3 soaking can promote downward band bending of the CZTSSe layer at the surface region. In addition, the Cd/NH3 soaking can eliminate the deep level acceptor in CZTSSe and decrease the density of the defects at the absorber/buffer interface. These effects can significantly reduce the carrier recombination in the depletion region of CZTSSe solar cells. As a result, the V OC of CZTSSe solar cells were increased from ∼460 mV to ∼480 mV, the efficiency of the best CZTSSe solar cell was increased from 10.2% to 11.6% by the Cd/NH3 soaking process.
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