Boosting the efficiency up to 33 % for chalcogenide tin mono-sulfide-based heterojunction solar cell using SCAPS simulation technique

Abstract

In the present article, an FTO/n-ZnO/SnS/Sb2S3/Au heterojunction photovoltaic cell structure was modeled and the cell performance in terms of output parameters viz. open circuit voltage (Voc), short-circuit current density (Jsc), efficiency (η) and fill factor (FF) by varying carrier concentration, and thickness of different layers involved, was studied at ambient conditions. The overall theoretical performance of the designed photovoltaic cell was examined using SCAPS 1-D simulation programme. The simulation programme operates by resolving semiconductor equations such as the Poisson equation, drift-diffusion equation, and continuity equation for both electrons and holes. The equations are generally solved in one-dimension (1D) in a steady state condition. The role of Sb2S3 HTL on the performance study of tin sulfide chalcogenide-based heterojunction photovoltaic cell (HPVC) was also analyzed. Moreover, the impact of functioning temperature between 273 K and 350 K on the performance of photovoltaic cell was observed, and an increase in temperature resulted in poor performance. The impact of different metal back contact work functions and some more electrical parameters viz. series-shunt resistances, defect concentration of layers and interfaces, and radiative recombination coefficients were also observed on HPVC. The simulation results revealed that the HTL Sb2S3 forms proper band alignment with the SnS chalcogenide absorber layer and enhanced the efficiency, η of HPVC by lessening the carrier recombination at the rear contact side. The dislocation and interface defect reduced significantly which leads to the smooth conduction of hole carriers, therefore, preventing of minority carriers to recombine within the absorber. A significant increase in the efficiency ∼33.24 % together with performance cell parameters Jsc ∼34.38 mA/cm2, Voc ∼1.09 V, and FF ∼88.49 % was observed.