Abstract
AbstractHow to improve the capacity of light‐harvesting is still an important point and essential strategy for the assembling of high‐efficiency quantum dot–sensitized solar cells (QDSCs). A believable approach is to implant new light absorption materials into QDSCs to stimulate the charge transfer. Herein, the few‐layer black phosphorus quantum dots (BPQDs) are synthesized by electrochemical intercalation technology using bulk BP as source. Then the obtained BPQDs are deposited onto the surface of Zn–Cu–In–S–Se (ZCISSe) QD‐sensitized TiO2 substrate to serve as another light‐harvesting material for the first time. The experimental results have shown that BPQDs can not only increase the absorption intensity by photoanode but also reduce unnecessary charge recombination processes at the interface of photoanode/electrolyte. Through optimizing the size and deposition process of BPQDs, the champion power conversion efficiency of ZCISSe QDSCs is increased to 15.66% (26.88 mA/cm2, Voc = 0.816 V, fill factor [FF] = 0.714) when compared with the original value of 14.11% (Jsc = 25.41 mA/cm2, Voc = 0.779 V, FF = 0.713).
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