Abstract
Kesterite materials such as copper–zinc–tin–sulfide (CZTS) and copper–zinc–tin–selenide (CZTSe) are potential candidates for cost‐effective photovoltaic applications. However, the material suffers low carrier collection efficiency due to poor quality of thin film during deposition and in‐house defects. The use of Ag‐doped CZTS layer as an intermediate layer can save the device from such issues. Herein, the impact of ACZTS layer on solar cell performance is analyzed. Numerical investigation on the influence of different loss mechanisms such as radiative recombination and recombination through traps and defects on the performance of the device is presented. A remarkable efficiency is achieved in solar cell with the incorporation of intermediate ACZTS layer.
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