Abstract
Properties of the underlying hole transport layer (HTL) in perovskite light-emitting devices (PeLEDs) play a critical role in determining the optoelectronic performance through influencing both the charge transport and the quality of the active perovskite emission layer (EML). This work focuses on manipulating the carrier transport behavior and obtaining a high-quality EML film by tailoring the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL with previously unused amino alcohol 3-amino-1-propanol (3AP). The modified PEDOT:PSS rendered a deeper work function that is more suitable for the hole injection from the HTL to EML. More importantly, the 3AP-modified PEDOT:PSS film can induce a low-dimensional perovskite phase that can passivate the defects in the EML, resulting in a significantly improved light emission. Such ameliorations consequently result in a dramatical enhancement in performance of PeLED with a low turn-on voltage of 2.54 V, a maximum luminance of 23033 cd/m2, a highest current efficiency of 29.38 cd/A, a corresponding maximum external quantum efficiency of 9.4%, and a prolonged lifetime of 6.1 h at a proper Cs/Pb ratio.
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