Boosting the charge transport and stability of metal halide perovskite with boron nitride nanosheets for X-ray detection and imaging

Abstract

Metal halide perovskites have been widely used in optoelectronic applications due to their excellent optoelectronic properties. However, ensuring their stability during operation remains a significant challenge. In this study, we investigated the charge carrier dynamics of perovskite films and devices, comparing those with and without the insertion of boron nitride on the grain boundaries. It was revealed that the charge transport and stability could be significantly enhanced with the present of boron nitride nanosheets on the grain boundaries. The incorporation of boron nitride led to a substantial improvement in charge carrier mobility and lifetime, without any noticeable changes in phase segregation or photostability. Moreover, the perovskite detectors incorporating boron nitride exhibited suppressed ion migration and dark current, while demonstrating an enhanced photoresponse and radiation exposure capability. These findings indicate that the addition of insulating boron nitride nanosheets acts as a stabilizer, enhancing the stability of both the perovskite thin films and the devices. Additionally, the incorporation of boron nitride significantly improved the device performance benefiting from the enhanced charge transport, indicating that the boron nitride nanosheets enhanced perovskite photodiodes possess great potential for X-ray detection and imaging.