Abstract
A bonding technology is introduced by using surface polished porous Ag in die-attachment structure. Bonding strength did not change much as the chip size varied from 3×3mm2 to 15×15mm2. This confirms that the technology was not influenced by the chip size, and thus can be used in large area bonding. Bonding mechanism based on stress-induced migration was discussed with the three dimensional finite element analyses. Transmission electron microscopy (TEM) observation further confirmed that single crystal hillocks and Ag particles formed at the bonding interface, bridging the interface together.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
