Abstract
Mechanical stress induced by bonding low-polarization GaAsP/AlGaAs quantum-well superluminescent diodes with p-side-up and p-side-down bonding methods has been observed using measurements of the degree of polarization. Due to the closer distance from the heat-sink to active region and the thermal expansion coefficient mismatch between the oxygen-free copper heat-sink and GaAs-based chip, p-side-down bonding configuration were observed to have a larger stress than p-side-up one. The high temperature accelerated aging test of SLDs with both bonding methods was carried out and discussed. Results suggested that such a bonding stress in superluminescent diode might degrade device's performance, i.e. reducing the threshold level of catastrophic optical damage and improving the failure rate on accelerated aging test.
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