Abstract
The bonding properties of hydrogenated amorphous germanium–carbon (a-Ge1−xCx:H) alloy films, deposited by the rf-co-sputtering technique, were measured by Fourier transform infrared, micro-Raman and X-ray photoelectron spectroscopies. Films with carbon content in the 0 to 100 at.% range were prepared under the same deposition conditions used to prepare a-Ge:H films. The infrared spectra revealed that the carbon is bonded in both sp3 and sp2 configurations. XPS measurements show a chemical shift of the binding energy of the Ge 3d core electrons toward larger energies as the carbon content increases, while the line-width remains almost constant. On the other hand, the peak associated with the C 1s orbital displays a doublet related to the C–Ge and C–C bonds. The Raman spectroscopy data are analyzed over a wide frequency range of the Stokes scattering for different alloy compositions.
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