Abstract
Currently, the integration method of silicon PIN radiation detectors faces challenges such as complex processes, poor reliability and thick dead layers. Novel integration methods based on metal bonding technology for realizing the integration of thick and thin PIN detectors are needed with the requirement of reducing signal crosstalk, package volume and weight. Combined with the current research on metal bonding technology, this paper presents an extensive review of metal bonding technology, especially metal Al bonding technology, to provide a certain reference to future research on the bonding processing of high-performance silicon PIN detector devices.
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