Abstract
The bonding of chemical vapor deposition (CVD) thick films diamond was performed by an active metal brazing technique. A brazing filler metal 92 (72Ag–28Cu)–8Ti alloy was used under controlled temperature and time. In this paper, the influence of the main bonding condition — peak heating temperature — was investigated. The mechanism of reaction between the Ag–Cu–Ti brazing filler metal and the diamond was analyzed using XRD, SEM and EDX in order to optimize the mechanical properties of the interfaces. It is found that a new reaction product; TiC, exists at the interface of the diamond and the brazing filler metal. In some regions, both the diamond and the brazing filler metal were split under shear force, the fracture surface cutting through the sections of both the diamond and the brazing filler metal. It can be considered that metallurgical bonding was formed at the interface of the diamond and the brazing filler metal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
