Abstract
The bonding electron distribution in silicon is determined from X-ray data. The numerical analysis is based on the Pendellosung data by Aldred and Hart (Proc. Roy. Soc. London A332 (1973) 223) for the `conventional' reflections and by Fehlmann and Fujimoto (J. Phys. Soc. Jpn. 38 (1975) 208) for the `forbidden' (222) reflection. It is shown that an accurate (222) structure amplitude aids greatly in interpreting the `conventional' reflections in terms of Dawson's general structure amplitude formalism. The bonding features can be described by two non-spherical scattering components plus a scalar deformation term (in the form of a radially contracted valence shell scattering amplitude). While the broad electron density features can be accurately determined, caution should be exercised in accepting the least-squares refined values for the Debye-Waller factor and for the anomalous dispersion (due to the high correlation between these parameters).
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
